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 BCR30AM-12LA
Triac
Medium Power Use
REJ03G0342-0300 Rev.3.00 Nov 30, 2007
Features
* IT(RMS) : 30 A * VDRM : 600 V * IFGT I, IRGT I, IRGT III : 50 mA * Non-Insulated Type * Planar Passivation Type
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 2, 4 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal
3 1 1 2 3
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off control of copier lamp
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V
REJ03G0342-0300 Page 1 of 6
Rev.3.00
Nov 30, 2007
BCR30AM-12LA
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT(RMS) ITSM I2 t PGM PG(AV) VGM IGM Tj Tstg -- Ratings 30 300 378 5 0.5 10 2 - 40 to +125 - 40 to +125 4.8 Unit A A A2s W W V A C C g Conditions Commercial frequency, sine full wave, Tc = 75C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Note2 Gate trigger current Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth(j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2 -- 20 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 3.0 1.6 2.5 2.5 2.5 50 50 50 -- 1.2 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 45A Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.3C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms inductive load
Supply Voltage
Time (di/dt)c Time Time VD
Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = -16 A/ms 3. Peak off-state voltage VD = 400V
Main Current Main Voltage (dv/dt)c
REJ03G0342-0300 Page 2 of 6
Rev.3.00
Nov 30, 2007
BCR30AM-12LA
Performance Curves
Maximum On-State Characteristics
103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 500
Rated Surge On-State Current
Tj = 25C
Surge On-State Current (A)
On-State Current (A)
400
300
200
100 0 100
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics (I, II and III)
102 7 5 3 2
Gate Trigger Current vs. Junction Temperature
103 7 5 4 3 2 102 7 5 4 3 2 101
Typical Example IRGT I, IRGT III
Gate Voltage (V)
VGM = 10V PG(AV) = 0.5W PGM = 5W
101 7 5 VGT = 2.5V 3 2 100 7 5 3 2
IFGT I
IGM = 2A
VGD = 0.2V IFGT I, IRGT I, IRGT III 10 -1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
-60 -40 -20
0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
103 7 5 4 3 2 102 7 5 4 3 2 101 0 20 40 60 80 100 120 140
Maximum Transient Thermal Impedance Characteristics (Junction to case)
Typical Example
Transient Thermal Impedance (C/W)
102 2 3 5 7 103 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
-60 -40 -20
Junction Temperature (C)
Conduction Time (Cycles at 60Hz)
REJ03G0342-0300 Page 3 of 6
Rev.3.00
Nov 30, 2007
BCR30AM-12LA
Allowable Case Temperature vs. RMS On-State Current
160
Maximum On-State Power Dissipation
50
On-State Power Dissipation (W)
40
360 Conduction Resistive, 30 inductive loads
Case Temperature (C)
140 120 100 80 60 40
Curves apply regardless of conduction angle
20
10
0
0
10
20
30
40
50
20 Resistive, inductive loads 0 0 10
20
30
40
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs. RMS On-State Current
160
Allowable Ambient Temperature vs. RMS On-State Current
160
Ambient Temperature (C)
120 100 80 60 40 20 0 0 5 10
Ambient Temperature (C)
140
All fins are black painted aluminum and greased Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 160 x 160 x t2.3 120 x 120 x t2.3 100 x 100 x t2.3
140 120 100 80 60 40 20 0 0 1
Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads
15
20
25
30
35
40
2
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Repetitive Peak Off-State Current vs. Junction Temperature
Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102
-60 -40 -20
Holding Current vs. Junction Temperature
103 7 5 4 3 2 102 7 5 4 3 2 101 08 20 40 60 0 100 120 140
Typical Example
Typical Example
0 20 40 60 80 100 120 140
-60 -40 -20
Junction Temperature (C)
Junction Temperature (C)
REJ03G0342-0300 Page 4 of 6
Rev.3.00
Nov 30, 2007
BCR30AM-12LA
Breakover Voltage vs. Junction Temperature
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
160
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Rate of Rise of Off-State Voltage
160 140 120 100 80 60 40 20
Typical Example
140 120 100 80 60 40 20 0
-60 -40 -20
Typical Example Tj = 125C
III Quadrant
I Quadrant
08 20 40 60
0 100 120 140
0 101 2 3 5 7 10 2 2 3 5 7 103 2 3 5 7 104
Junction Temperature (C)
Rate of Rise of Off-State Voltage (V/s)
Commutation Characteristics
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/s)
7 5 Minimum 4 Characteristics 3 Value 2 101 7 5 4 3 2 100 7 101
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
Gate Trigger Current vs. Gate Current Pulse Width
103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
Typical Example IFGT I IRGT I IRGT III
III Quadrant
I Quadrant
Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz
2 3 4 5 7 103
2 3 4 5 7 102
Rate of Decay of On-State Commutating Current (A/ms)
Gate Current Pulse Width (s)
Gate Trigger Characteristics Test Circuits
6 6
6V V
A 330
6V V
A 330
Test Procedure I 6
Test Procedure II
6V V
A 330
Test Procedure III
REJ03G0342-0300 Page 5 of 6
Rev.3.00
Nov 30, 2007
BCR30AM-12LA
Package Dimensions
Package Name TO-3P JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Previous Code TO-3P / TO-3PV MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
1.5
15.6 0.3
4.8 0.2
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Order Code
Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 20 30 Standard order code Type name Type name - Lead forming code Standard order code example BCR30AM-12LA BCR30AM-12LA-A8
Note : Please confirm the specification about the shipping in detail.
REJ03G0342-0300 Page 6 of 6
Rev.3.00
Nov 30, 2007
0.3
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
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(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2


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